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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2151 DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Converters *Inverters *Switching regulators *Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX 600 400 7 15 30 150 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=7.5A ; VCE=5V IC=0.5A ; VCE=10V 10 MIN 400 7 2SC2151 TYP. MAX UNIT V V 1.5 2.0 0.1 0.1 V V mA mA 15 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2151 Fig.2 Outline dimensions 3 |
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